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APT10M11JVRU2
ISOTOP(R) Boost chopper MOSFET Power Module
K
VDSS = 100V RDSon = 11m max @ Tj = 25C ID = 142A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Very rugged * Low profile * RoHS Compliant
D
G
S
S G D
K
ISOTOP
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C
mJ A
Tc = 90C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT10M11JVRU2 - Rev 1 June, 2006
Tc = 25C
Max ratings 100 142 106 576 30 11 450 144 50 2500 30 47
Unit V A V m W A
APT10M11JVRU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Min Tj = 25C Tj = 125C 2
Typ
VGS = 10V, ID = 71A VGS = VDS, ID = 2.5mA VGS = 20 V, VDS = 0V
Max 250 1000 11 4 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 50A @ TJ=25C VGS = 15V VBus = 50V ID = 142A @ TJ=25C R G = 0.6
Min
Typ 8600 3200 1180 300 95 110 16 48 51 9
Max
Unit pF
nC
ns
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time
Test Conditions IF = 30A IF = 60A IF = 30A VR = 200V VR = 200V VR = 200V IF=1A,VR=30V di/dt =200A/s IF = 30A VR = 133V di/dt =200A/s
Min
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Typ 1.1 1.4 0.9 94 21 24 48 3 6 33 150 31 335 19
Max 1.15 250 500
Unit V A pF ns
A nC
APT10M11JVRU2 - Rev 1 June, 2006
IF = 30A VR = 133V di/dt =1000A/s
ns nC A
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APT10M11JVRU2
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min MOSFET Diode 2500 -55
Typ
Max 0.28 1.21 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
Typical MOSFET Performance Curve
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APT10M11JVRU2 - Rev 1 June, 2006
APT10M11JVRU2
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APT10M11JVRU2 - Rev 1 June, 2006
APT10M11JVRU2
Typical Diode Performance Curve
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APT10M11JVRU2 - Rev 1 June, 2006
APT10M11JVRU2
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APT10M11JVRU2 - Rev 1 June, 2006
APT10M11JVRU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT10M11JVRU2 - Rev 1 June, 2006
Gate

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